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Jpn. J. Appl. Phys. 46 (2007) pp. 4011-4015  |Next Article|  |Table of Contents|
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Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors

Sergey L. Rumyantsev1,2, Kristel Fobelets3, Thomas Hackbarth4, and Michael S. Shur1

1Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, U.S.A.
2Ioffe Institute of Russian Academy of Sciences, 194021 St-Petersburg, Russia
3Department of Electrical and Electronic Engineering, Imperial College London, Exhibition Road, London SW7 2BT, U.K.
4Daimler-Chrysler AG, Research Center Ulm, Wilhelm-Runge-St. 11, 89081 Ulm, Germany

(Received March 19, 2007; accepted April 7, 2007; published online July 4, 2007)

The 1/ f noise in insulated gate strained Si n-channel modulation doped field effect transistors (MOSMODFETs) and in control Si metal–oxide–semiconductor FETs (MOSFETs) has been studied at gate voltages below and above the threshold. All transistors have a deposited gate oxide of 20 nm and gate length of 0.5 µm. Mobilities extracted from the capacitance– and current–voltage characteristics were found between 580–700 cm2 V-1 s-1 for the MOSMODFETs, and between 300–400 cm2 V-1 s-1 for the Si MOSFETs. In spite of the difference in the mobility both FETs demonstrated identical noise characteristics. The 1/ f noise was found well described by the model of number of carriers fluctuations equally below and above threshold. The effective density of traps is ∼5×1010 eV-1 cm-2 responsible for the noise was within the usual range reported before for regular n-channel Si MOSFETs and somewhat higher than for p-SiGe MODFETs.

KEYWORDS: 1/ f noise, strained-Si, MOSFET, MODFET
URL: http://jjap.ipap.jp/link?JJAP/46/4011/
DOI: 10.1143/JJAP.46.4011


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